Geqi Compound Semiconductor announced today (2nd) that it will officially launch a cabinet in the fourth quarter and will be laid out in large-sized silicon carbide (SiC). Chairman Zhang Zhongjie said that Geqi's current technical strength has r...
Geqi Compound Semiconductor announced today (2nd) that it will officially launch a cabinet in the fourth quarter and will be laid out in large-sized silicon carbide (SiC). Chairman Zhang Zhongjie said that Geqi's current technical strength has reached the first and second level in the industry, and at the same time, it will actively lay out larger-sized long crystal boilers and carry out relevant regulations during the research and development stage.
Geqi Chairman Zhang Zhongjie emphasized that the 6-inch platform is still the company's main production axle in the current stage, with advantages in scale benefits and yield control; at the same time, the 8-inch crystal long crystal and hot field module design have completed preliminary verification, and will continue to be introduced into the 8-inch process platform in a timely manner according to customer product generation conversion and application needs, ensuring the best balance of yield stability and cost-effectiveness.
Speaking of the potential outlet of the third type of semiconductor, Wu Yizhang, chief of Geqi Compound semiconductor business, pointed out that silicon carbide was mainly used in power devices, vehicle and energy-energy related fields in the past, and has now entered a new stage of development. For example, in AR intelligent lenses (AR Lens) lenses and high-level 3D IC packaging, silicon carbide needs to be used for heat dissipation, mainly in the heat dissipation plate.
Wu Yizhang said that in terms of materials, the heat dissipation K value of silicon carbide is only as high as diamond, and the heat dissipation K value of ceramic substrates is about 200~230, but the heat dissipation K value of silicon carbide can reach 400, or even close to 500. With the demand for future high computing of data centers and AI, silicon carbide will become a material choice that can meet heat dissipation needs more than traditional ceramics.
In the 3D IC packaging section, there are two places that will be SiC opportunities. Wu Yizhang continued, in addition to the heat dissipation plate just mentioned, the test will be conducted with "electrically-conductive SiC" as the priority, and the next stage will test whether the Silicon Interposer is expected to be introduced into SiC, which will adopt the "semi-ultimate SiC".
In terms of capacity deployment, Geqi plans to increase the number of long crystal furnaces to a scale of 100 units by the end of 2025, and combines independent cutting and detection capabilities to build a complete mass production system with controllable delivery time and flexible expansion. Currently, the product line supports a number of high-power applications, including electric vehicle main driver module, optical inverter and AI high-efficiency server, and continues to enter the international customer verification process.
Geqi semiconductor also revealed that 6-inch and 8-inch machines can be controlled and shared. With the increase in Japanese and Korean customers in the fourth quarter, they also negotiated with two or three companies to discuss LTA (Long Term Agreement) and actively planned the 12-inch factory. In a smooth manner, 8-inch and 12-inch production capacity will be expanded separately in the first half of next year, while 8-inch production capacity is expected to double.
In terms of supply chain layout, Geqi is divided into two main axes. One is the horizontal supply chain, which will fully support customers from long crystals and crystal circles to component ends; the vertical supply chain cooperates with competitors to cooperate by providing large-size and customized crystals. The company also stated that through cooperation with the same industry rather than price battles and taking different technical routes is the direction of Geqi.
At present, Geqi has simultaneously launched cooperation plans in North America, Japan, Europe and other regions. In the future, it will set up technical service points based on business expansion processes, provide material suggestions and application support that are close to demand, and accelerate the implementation of silicon carbide in global high-power applications.
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